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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/427E63L
Repositorysid.inpe.br/mtc-m21c/2020/03.23.14.09   (restricted access)
Last Update2020:12.17.13.35.21 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21c/2020/03.23.14.09.20
Metadata Last Update2022:01.04.01.35.02 (UTC) administrator
DOI10.1103/PhysRevMaterials.4.023602
ISSN2475-9953
Citation KeyRodriguesJúniorMRRASGPM:2020:PsReRo
TitleDirect observation of large strain through van der Waals gaps on epitaxial Bi2Te3/graphite: Pseudomorphic relaxation and the role of Bi-2 layers on the BixTey topological insulator series
Year2020
MonthFeb.
Access Date2024, May 18
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size4315 KiB
2. Context
Author1 Rodrigues Júnior, Gilberto
2 Marcal, Lucas Atila Bernardes
3 Ribeiro, Guliherme A. s.
4 Rappl, Paulo Henrique de Oliveira
5 Abramof, Eduardo
6 Sciammarella, Paulo Vitor
7 Guimarães, Luciano de Moura
8 Perez, Carlos Alberto
9 Malachias, Angelo
Resume Identifier1
2
3
4 8JMKD3MGP5W/3C9JJ37
5 8JMKD3MGP5W/3C9JGUH
Group1
2
3
4 LABAS-COCTE-INPE-MCTIC-GOV-BR
5 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 Universidade Federal de Minas Gerais (UFMG)
2 Universidade Federal de Minas Gerais (UFMG)
3 Universidade Federal de Minas Gerais (UFMG)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Universidade Federal de Viçosa (UFV)
7 Universidade Federal de Viçosa (UFV)
8 Laboratório Nacional de Luz Síncrotron (LNLS)
9 Universidade Federal de Minas Gerais (UFMG)
Author e-Mail Address1
2
3
4 paulo.rappl@inpe.br
5 eduardo.abramof@inpe.br
JournalPhysical Review Materials
Volume4
Number2
Pagese023602
History (UTC)2020-03-23 14:11:06 :: simone -> administrator :: 2020
2022-01-04 01:35:02 :: administrator -> simone :: 2020
3. Content and structure
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Content TypeExternal Contribution
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AbstractLayered materials can usually grow without strain on top of distinct substrates if the only interaction between them is due to van der Waals forces. In such a scenario it would be expected that the heterointerface made up of weak bounds would not affect the overlayed material significantly for several large lattice-mismatched systems. Here we have studied the first stages of the heteroepitaxial growth of layered bismuth telluride topological insulator on top of highly oriented pyrolitic graphite (HOPG) by molecular beam epitaxy. Samples were investigated by atomic force microscopy (AFM), synchrotron x-ray diffraction (XRD), and micro-Raman spectroscopy. AFM images show hexagonal/triangular flat islands with exposed HOPG areas for the low coverage regime, and the lattice parameter of these Bi2Te3 structures were measured by XRD. The existence of pseudomorphic strain at the initial Bi2Te3 layers was retrieved by both XRD and Raman spectroscopy. We have found evidence that Bi2Te3 layers near the interface are subject to an in-plane compressive strain, leading to a pseudomorphic out-of-plane lattice expansion. Furthermore, the presence of Bi2Te3 islands locally distorts the topmost layer of HOPG, resulting in tensile strain which was measured by Raman spectroscopy. The observed relaxation of 0.1-0.2% for each van der Waals gap is used to calculate elastic constants of Bi-2 bilayers, which are crucial building blocks for the formation of other BixTey topological insulator compounds. Finally, the impact of such a strain in Bi2Te3 electronic structure was investigated by density functional theory calculations. The results show that the band structure of this strained material remains unchanged at the center of the Brillouin zone, confirming the robustness of surface states, but it is consistently affected at the M and K zone edges.
AreaFISMAT
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4. Conditions of access and use
Languageen
Target FilePhysRevMaterials_v4_p023602_2020_Bi2Te3-HPOG.pdf
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Next Higher Units8JMKD3MGPCW/3ESR3H2
DisseminationSCOPUS
Host Collectionurlib.net/www/2017/11.22.19.04
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